注入光敏三极管的基本特性和分析  

Fundamental Characteristics and Analysis of Injecting Phototransistor

作　　者：何民才[1] 黄启俊[1] 陈炳若[1] 龙理[1] 陈畅生[1] 戴锋[1] 池桂梅 

机构地区：[1]武汉大学物理系

出　　处：《Journal of Semiconductors》1994年第9期631-638,共8页半导体学报（英文版）

摘　　要：本文介绍了注入光敏器件的物理基础、注入光敏三极管的基本结构和特性。通过与普通光敏三极管的比较，可以看出注入光敏器件的特征所在．最后，用我们提出的理论对注入光敏三极管的特性进行了合理的解释．Abstract The physical fundamentals of the injecting photosensitive device, the basic configuration and characteristics of the injecting phototransistor have been introduced.Through comparing the injecting phototransistor with the conventional one, it canbe seen that the former has especial features. Finally, the characteristic curves of the injecting phototransistor can be reasonably explained by the theory presented by the authors.

关 键 词：光敏三极管 注入 光敏器件 特性 

分 类 号：TN32[电子电信—物理电子学]