掺硼对非晶碳化硅膜的影响  

Effect of Boron-Doping on Amorphous Silicon-Carbon Film

作　　者：孙金坛[1] 邱德润[1] 

机构地区：[1]合肥工业大学,合肥工业大学应用物理系

出　　处：《材料科学与工艺》1994年第1期28-32,共5页Materials Science and Technology

摘　　要：试验观测了掺硼对氢化非晶碳化硅膜生长速率、膜的组分、光学带隙、电导率、硬度和结合力的影响．结果证明，用薄离子作分解（ＳｉＨ４和ＣＨ４）混合气体制备的α－Ｓｉ１－ｘ：ＣＸ：Ｈ膜能有效的掺杂．硼掺杂可改变光学带隙、电导率和硬度．退火可增加薄膜的硬度和结合力．The effect of Boron --doping on growth --rate, composition, optical gap, dark andphoto conductivity, hardness and coherence force of α--Si1-x--.Cx' H film has beenstudied expcrimentaly. As can be seen from these data, α--Si1-x--.Cx:H prepared by theplasma decomposition of (SiH4+CH4) gas mixture can be effectively doped,Boron--doping can change optical gap, conductivity and hardness of the film. Heattreatment can increase the hardness and coherence force. of α -- Si1-x-xCx:H film.

关 键 词：掺硼 硬度 光学带隙 非晶碳化硅膜 

分 类 号：TN304.8[电子电信—物理电子学]