熔区固液界面温度梯度的优化与再结晶SOI晶膜质量的提高  

High Quality SOI Recrystallized with Optimized Thermal Gradients at Solid- Liquid Interfaces

作　　者：张鹏飞[1] 侯东彦[1] 杨景铭[1] 钱佩信[1] 罗台秦[1] 

机构地区：[1]清华大学微电子学研究所,香港科技大学电机电子工程学系

出　　处：《电子学报》1994年第5期84-87,共4页Acta Electronica Sinica

基　　金：高等学校博士学科点专项科研基金

摘　　要：本文研究了多晶硅薄膜在红外熔区再结晶过程中熔化和固化前沿不同的推进行为，指出为了提高再结晶质量，熔区两侧对所得到的辐射能流密度分布有不同的要求，据此提出了一种兼顾熔化和固化要求的不对称加热区熔再结晶技术，成功地制备了高质量的ＳＯＩ晶膜．The melting and solidifying behaviors of a thin Si film have been studied. The morphological imperfections can be inhibited by a higher thermal gradient at the melting front and the density of constitutional defects (as grainboundaries and dislocations)can be decreased by a lower thermal gradient at the solidifying front.A novel structure of graphite heater has been invented to meet the different demands on radiative heating. Successful fabrication of high quality SOI has been carried out.

关 键 词：区熔再结晶 SOI晶膜 再结晶 硅 

分 类 号：TN304.12[电子电信—物理电子学]