一种高性能的低温硅双极晶体管  

A High Performace Low Temperature Silicon Bipolar Transistor

作　　者：郭维廉[1] 郑云光[1] 李树荣[1] 张咏梅[1] 

机构地区：[1]天津大学电子工程系

出　　处：《电子学报》1994年第8期30-35,共6页Acta Electronica Sinica

摘　　要：本文设计并研制出在液氮温度（７７Ｋ）下，ｈＦＥ≈３００；在１０Ｋ下，ｈＦＥ＝２１．７的高性能硅双极晶体管，此值优于文献报导的水平［７］．测量了该器件在７７Ｋ的ＩＣ，ＩＢ－ＶＢＥ特性和ｈＦＥ－１／Ｔ特性，并对这些曲线的解释进行了新的理论探讨。The silicon bipolar transistors with hFE≈300 at 77K and hFE=21.7 at 10K (this value is better than that reported in reference[7]have been designed and fabricated. The IC, IB-VBE characteristics at 77K and hFE-1/T characteristics of the devices have been measured and an explorative explanation on them has been given by a new idea.

关 键 词：低温 晶体管 硅双极晶体管 

分 类 号：TN325.2[电子电信—物理电子学]