Ta2O5敏感膜H^＋—ISFET研究  

Investigation of H￣+ -ISFET with a Ta_2O_5 Sensitive Film

作　　者：武世香 陈士芳[1] 王东红[1] 王喜莲[1] 孙淑芳 

机构地区：[1]哈尔滨工业大学微电子技术教研室

出　　处：《哈尔滨工业大学学报》1994年第4期46-49,共4页Journal of Harbin Institute of Technology

摘　　要：在不用金作掩蔽膜的情况下，在氢氟酸混合液中对采用直流反应溅射方法制备的Ｔａ２Ｏ５薄膜进行选择性腐蚀，制成Ｔａ２Ｏ５膜Ｈ＋－ＩＳＦＥＴ。测试结果表明，该器件在灵敏度、线性范围、线性度、响应时间、滞后、时漂和选择性等方面普遍优于Ｓｉ３Ｎ４膜同类器件。可直接用于溶液的ｐＨ值测量。A H+ -ISFET using a Ta2O5 film as a sensitive film has been made. The film is deposited by D-C reactive sputtering and etched by 'dxed HF solution without using An mask. The results of test of the devices has shown that the sensitivity, linearity, linearity region, response time, time drift, time lag and selectivity are all superior to those of the same kind of the device using the St3N, film as sensitive film. The devices can be directly used to measure the PH value.

关 键 词：敏感膜 溅射 氧化钽 半导体 

分 类 号：TN305.92[电子电信—物理电子学]