分子束外延生长晶格匹配HgSe／ZnTe超晶格  

MOLECULAR BEAM EPITAXIAL GROWTH OF LATTICE-MATCHED HgSe/ZnTe SUPERLATTICE

作　　者：彭中灵[1] 袁诗鑫[1] 

机构地区：[1]中国科学院上海技术物理研究所

出　　处：《红外与毫米波学报》1994年第1期53-58,共6页Journal of Infrared and Millimeter Waves

摘　　要：提出并生长了晶格匹配的ＨｇＳｅ／ＺｎＴｅ超晶格系统，红外透射测试表明其禁带宽度落在红外波段的能量范围，将Ｚｈｕ的关于ＺｎＳｅＭＢＥ生长模型加以推广，讨论了生长温度和束流条件对ＨｇＳｅＭＢＥ生长的影响。Lattice-matched HgSe/ZnTe superlattice systems were proposed and grown for the first time. Infrared transmission measurement indicated that their band gaps fall in the infrared spectrum range. By extending Zhu's MBE growth model of ZnSe,the influence of growth temperature and flax condition on HgSe-MBE was discussed,and MBE-grown HgSe epilayers were first obtained at 160～180℃.

关 键 词：分子束外延 红外材料 超晶格半导体 

分 类 号：TN213[电子电信—物理电子学]