MOCVD生长GaAs／Al_xGa_（1－x）As多量子阱子带间红外吸收特性  

INTERSUBBAND INFRARED ABSORPTION IN GaAs/AlGaAs MULTIQUANTUM WELL GROWN BY MOCVD

作　　者：程兴奎[1,2] 黄柏标[1,2] 徐现刚[1,2] 刘士文[1,2] 任红文[1,2] 蒋民华[1,2] 

机构地区：[1]山东大学光电材料与器件研究所 [2]山东大学晶体材料研究所

出　　处：《红外与毫米波学报》1994年第1期33-36,共4页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金

摘　　要：对ＭＯＣＶＤ生长的ＧａＡｓ（４０）／ＡｌｘＧａ（１－ｘ）Ａｓ（３００）多量子阱结构观察到附内电子从基态到第一激发态跃迁引起的红外吸收．用Ｂｒｕｋｅｒ红外光谱仪测量，发现了一个峰值在９８６ｃｍ－１（１０．１μｍ）带宽为２３７ｃｍ－１（９～１１．５μｍ）的强吸收峰，该峰位置与阱内电子从基态到第一激发态跃迁所计算的吸收峰位置基本一致．infrared absorption due to the electronic transition between the confined ground state and the first excited state in a GaAs (40)/AlGaAs (300 A) multiquantum well structure grown by MOCVD was observed. The infrared absorption spectrum measured at room temperature shows a strong absorption peak at 986cm-1(λ = 10.1 μm), with absorption bandwidth (full width at half maximum) of about 237cm-1 (9～11.5μm). The position of the infrared absorption peak obtained from the measurement is basically ill agreement with the calculated result on the basis of the electronic transition from the confined ground state to the first excited state in the GaAs/Al0.22Ga0.78As quantum well.

关 键 词：多量子阱 子带 红外辐射 外延生长 

分 类 号：TN215[电子电信—物理电子学]