具有宽带响应的GaAs/AlGaAs多量子阱红外探测器  

GaAs/AlGaAs MULTI-QUANTUM WELL INFRARED DETECTOR WITH WIDE-BAND RESPONSE

作　　者：李晋闽[1] 郑海群[1] 曾一平[1] 孔梅影[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《红外与毫米波学报》1994年第5期377-380,共4页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金资助项目

摘　　要：报道具有宽带响应的130元线列GaAs/AlGaAs多量子阱红外探测器的研究进展.通过表面光栅耦合,采用垂直入射的工作模式,在T=80K时测得器件探测率的光谱响应曲线的半峰宽为4.3μm.在λ_p=9.5μm时的峰值探测率为4.89×10~9cmHz^(1/2)/W,电压响应率为2.89×10~4V/W.The investigations of 130-element GaAs/AlGaAs multi-quantum well infrared detector linear-array with a wide-band response are reported in this paper. A spectral response curve of the detector array with FWHM=4.3 μm has been demonstrated with a mode of front-side normal illumination based on a waveguide of doubly periodic grating coupler. A peak detectivity Dλ* = 4.89 × 109cmHz1/2/W and a high responsivity Rp = 2.89 × 104 V/W have been obtained at λp = 9.5μm and T = 80K.

关 键 词：红外探测器 多量子阱 砷化镓 ALGAAS 

分 类 号：TN215[电子电信—物理电子学] TN213