反常退沟道现象与有效沟道模型  

THE ANOMALOUS DECHANNELING AND THE MODEL FOR THE EFFECTIVE CHANNEL

作　　者：潘传康[1] 江风益[1] 

机构地区：[1]南昌大学基础课部

出　　处：《南昌大学学报（理科版）》1994年第1期21-26,共6页Journal of Nanchang University(Natural Science)

基　　金：江西省自然科学基金南昌大学基础理论研究基金

摘　　要：我们在对Ⅱ—Ⅳ族ＺｎＳｅ／ＺｎＳ和Ⅲ—Ⅴ族ＧａＳｂ／ＡｌＳｂ应变超晶格进行离子束沟道测试中发现，反常退沟道现象与超晶格的层厚有密切的关系。通常所认为的［１１０］反常退沟道现象普遍存在于应变超晶格中这一结论并不完全正确。使用我们提出的有效沟道模型及其沟道宽度计算公式完整地解释了这种现象。From our channeling measurements on Ⅱ Ⅵ ZnSe/ZnS and Ⅲ ⅤGaSb/AlSbstrain-layer Superlattices, We found that the[110]anomalous dechanneling phenomenonstrongly depends on the individual tayer thicknesses in the SLS.A special phenomenon forZnSe(100A)/ZnS(20A)and GaSb(50A)/AlSb(50A)SLS,that their[110]dechannelingyield is not much higher than the [110]Channeling yield,was observed. The phenomenon isinterpreted by the model for the effective channel and the calculation formula of the effectivechannel geometry width.The theoretical analysis is in good agreement with the experiment re-sults.

关 键 词：半导体超晶格 反常退沟道 离子束 

分 类 号：O472.1[理学—半导体物理]