半导体量子阱中电子朗道能级的共振分裂和钉扎行为  

Resonant Splitting and Pinning Behavior of the Landau Levelof an Electron in a Semiconductor Quantum Well

作　　者：赵国忠[1] 王旭[1] 梁希侠 

机构地区：[1]内蒙古大学固体物理研究室

出　　处：《内蒙古大学学报（自然科学版）》1994年第4期399-407,共9页Journal of Inner Mongolia University：Natural Science Edition

摘　　要：本文采用改进的Ｗｉｇｎｅｒ－Ｂｒｉｌｌｏｕｉｎ微扰理论，研究了束缚于半导体量子阱中电子共振谱的分裂．考虑到晶格振动的各种光学极化模，解释了电子共振谱在横光学声子频率附近的这种“奇异”的分裂和钉扎行为．计算了跃迁频率对磁场强度的依赖性．理论结果和他人的实验数据进行了比较．最后指出，这种共振分裂和钉扎行为是量子阱中电子和界面声子相互作用的结果．The splitting of the cyclotron resonance spectra of an electron confined in asemiconductor quantum wellSQW)has been studied by means of improved Wigner-Bril-louin perturbation theory. A resonant splitting and pinning behavior near the transverseoptical phonon energy has been understood by taking account of the various optical polar-ization modes of lattice vibration in SQW.The transition energy as a function of magneticfield strength is calculated. The theoretical results are compared with available experimen-tal data. The resonant splitting and pinning behavior near the TO phonon energy are point-ed out to be the results of the electron interacting with the interface phonon in SQW.

关 键 词：量子阱 共振分裂 钉扎 电子 能级 

分 类 号：O471.3[理学—半导体物理]