非晶与单晶硅电解掺氢的研究  

A STUDY OF THE PROCESS OF HYDROGEN-ADULTERATED ELECTROLYSIS OF AMORPHOUS AND MONOCRYSTAL SILICON

作　　者：何晓英[1] 潘炜[1] 蔡生民[1] 秦国刚[1] 傅济时[1] 金鹰[1] 金泗轩[1] 

机构地区：[1]四川师范学院化学系,北京大学

出　　处：《四川师范学院学报（自然科学版）》1994年第2期167-169,共3页Journal of Sichuan Teachers College(Natural Science)

摘　　要：用电解方法在非晶硅中掺入了原子氢，使非晶硅中悬挂键的ＥＳＲ信号明显下降，相应悬键密度由２．５×１０￣（１８）ｃｍ￣（－３）下降为８×１０￣（１７）ｃｍ￣（－３）．并发现以Ｈ＿３ＰＯ＿４为电解液时，对作为阴极的非晶硅和Ｐ型单晶硅均有轻度的腐蚀作用，在Ｈ＿２ＳＯ＿４中电解，温度高达２２０℃，对硅也无腐蚀作用．Adulterating amorphous silicon with atomic hydrogen,by means of electrolysis,the au-thors find that the ESR signal in the a-si hanging bond weakens evidently and the density of the hanging bonddrops from 2.5×10￣(18)cm￣(-3)to 8× 10￣(17)cm￣(-3) The authors also find that in the H_3PO_4 electrolytic solution,thesilicon cathode is slightly corroded whereas in the H_2SO_4 solution the silicon cathode is not corroded even at atemperature as high as 220℃.

关 键 词：氢 电解 非晶硅 单晶硅 

分 类 号：O613.72[理学—无机化学]