真空蒸发法制备氧化钒薄膜的研究  

Properties of VO_x Thin Films Prepared by Vacuum Evaporation

作　　者：吴淼[1] 胡明[1] 张之圣[1] 刘志刚[1] 温宇峰[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《硅酸盐通报》2005年第1期17-19,24,共4页Bulletin of the Chinese Ceramic Society

基　　金：天津市自然科学基金项目(043600811).

摘　　要：以V2O5粉末为原料,采用真空蒸发结合真空热处理方法制备V O x薄膜,运用X R D(X射线衍射)和SE M(扫描电子显微镜)技术分析了基片材料、基片温度、真空热处理工艺对氧化钒薄膜结晶状态、物相组成和表面形貌的影响,在基片温度为200℃和400℃时所沉积的氧化钒薄膜在室温附近的电阻温度系数(TC R)分别达到-3%,并发现随着基片温度的升高,薄膜在室温附近的电阻率降低,TC R绝对值减小。VOx thin films were prepared by means of evaporation of V2O5 powder and post annealing in vacuum. The effects of the substrate materials, substrate temperature and vacuum annealing process on the different crystallization,phases composition and surface morphology of the thin film were stdutied by XRD and SEM techniques. TCR of the film prepared at substrate temperature 200℃is up to -3%.The resistivity and TCR of the film prepared in higher substrate temperature are lower.

关 键 词：氧化钒薄膜 基片温度 真空蒸发法 X射线衍射 绝对值 室温 表面形貌 制备 片材 V2O5 

分 类 号：TQ174[化学工程—陶瓷工业] O484[化学工程—硅酸盐工业]