多晶硅膜及其薄发射极退火特性的研究  

A study on the Annealing Characteristics of the Polysilicon Film and Its Thin-Emitter

作　　者：徐静平[1] 余岳辉[1] 

机构地区：[1]华中理工大学固体电子学系

出　　处：《微电子学》1994年第2期61-65,共5页Microelectronics

摘　　要：本文详细研究了退火方式和条件对多晶硅膜结构、电性能以及多晶硅接触薄发射极的发射极电阻的影响。结果表明，１０００℃以上热退火对于减小发射极电阻、降低多晶硅膜的电阻率有利；激光退火不但能减小发射极电阻，导致更低的多晶硅膜电阻率，而且还能获得极浅的单晶发射结，在改善薄发射极晶闸管特性方面显示出较大优势。ffects of annealing procedures and conditions on the structure of poly-silicon film. its electric property andemitter resistance of poly-Si contacted thin emitters are studied in detail in the paper. It is shown that thermal annealingabove 1000℃ is favourable for the reduction of emitter reeistance and the decrease in resistivity of poly silicon films. Apart from that.ultra shallow single crystalline emitter junction can also be obtained by using laser annealing.whichexhibits greater superiority in improving the performance of thyristors with thin-emitter.

关 键 词：多晶硅膜 薄发射极 热退火 激光退火 

分 类 号：TN304.12[电子电信—物理电子学]