双位组合四探针法测量硅片电阻率  

Measurement of the Resistivity of Si Wafers Using Double-Configuration Four-Point Probe

作　　者：鲁效明[1] 宿昌厚[1] 

机构地区：[1]中国计量科学研究院无线电处,北京工业大学

出　　处：《微电子学》1994年第3期60-63,共4页Microelectronics

摘　　要：本文研究用双位组合四探针测量硅材料薄片电阻率的新技术，提出新的计算公式和厚度修正原理。用双位组合法测量不同厚度硅样品所得结果与常规四探针法测得的结果相比较表明，用双位组合法测量较厚（Ｗ／Ｓ＞０．６）样品时，非但不能直接套用常规的厚度计算方法，而且还必须采取新的厚度修正。本文给出两种双位组合法的计算公式，分析新的厚度修正原理，给出测试结果，得出相应结论。A new technique called double-configuration 4-point probe is examined in the paper to measure the resistivi-ty of silicon wafers. For thicker samples(W/S>0.6), conventional method for thickness calculations cannot be used. andnew equations for thick nes correction should be employed , which are presented in the paper. Calcuation equations for 2double-configuration methods are given.Theory of the new thickness correction method is elaborated . Measured resultsare presented.

关 键 词：硅片 电阻率 回探针法 半导体 

分 类 号：TN304.120[电子电信—物理电子学]