X波段硅里德型双漂移崩越二极管外延材料  

Preparation of MuIti-Layer Epitaxial Si for X-Band Double Drift Read IMPATT Diodes

作　　者：王向武[1] 陆春一[1] 赵仲镛 

机构地区：[1]南京电子器件研究所

出　　处：《微电子学》1994年第3期52-56,共5页Microelectronics

摘　　要：采用全外延工艺，研制了Ｘ波段里德型双漂移崩越二极管所需πｐｎγＮ￣＋多层外延材料，分析了各过渡区的形成机理及减小其宽度的方法，实现了陡峭的杂质浓度分布。Multi epitaxial layers used for X-band double drift Read impact avalanch and transit time diodes have beenprepared using full epitaxy process. Mechanisms for the formation of each transit region are examined and procedures tominimize the width of the transit regions are discussed.An abrupt doping profile has been attained.

关 键 词：崩越二极管 外延生长 材料 硅 

分 类 号：TN312.7[电子电信—物理电子学]