2～3μmAlSi的反应离子刻蚀及实用化技术研究  

Reactive Ion Etching of 2～3μm AlSi Lines And Its Pragmatization

作　　者：郑闽 马宏 

机构地区：[1]中国华晶电子集团公司中央研究所

出　　处：《微电子学》1994年第5期64-69,共6页Microelectronics

摘　　要：在Ｔｅｇａｌ１５１２ｅ反应离子刻蚀（ＲＩＥ）设备上，利用Ｃｌ＿２、ＳｉＣｌ＿４为主要刻蚀气体进行了Ａｌ－Ｓｉ１．２％的反应离子刻蚀，研究了各参数对刻蚀结果的影响。在此基础上，本文着重围绕线宽控制和后处理等关键性问题进行了实用化应用研究，并得到了最佳的刻蚀程序。最小加工线条宽度达到１．５μｍ，实用达２～３μｍ，体刻蚀率大于１μｍ／ｍｉｎ，均匀性小于±５％，线宽损失小于１０％，对热氧化ＳｉＯ＿２和ＡＥ１４５０Ｊ正性抗蚀剂的刻蚀选择比分别达８：１和３：１。此技术已用于多种多批量电路的制作工艺之中，效果良好。Reactive ion etching of Al-Si 1.2%has been done using Cl_2 and SiCl_4 as the source.The influence of process parameters on the etched lines was investigated. Practical application of the process was studied,with emphasis on some critical problems such as line-width control and post treatment.An optimal etching procedure was generated as a result of the study. The minimum line-width achieved is 1.5μm,and 2～3μm for practical use. The bulk etching rate is greater than 1μm/min. A uniformity less than 5%and CD loss less than 10%have been achieved.The selectiv- ity to thermal oxidized SiO_2 and AZ1450J positive resist is 8:1 and 3:1,respectively.

关 键 词：反应离子刻蚀 高聚物 各向异性 腐蚀 刻蚀 

分 类 号：TN405.983[电子电信—微电子学与固体电子学]