TiO_2薄膜制备及其氧敏特性  

Preparation of TiO_2 Thin Films and Their Oxygen-Sensing Properties

作　　者：戴振清[1] 孙以材[1] 潘国峰[1] 孟凡斌[1] 李国玉[1] 

机构地区：[1]河北工业大学微电子研究所

出　　处：《Journal of Semiconductors》2005年第2期324-328,共5页半导体学报（英文版）

摘　　要：采用直流磁控溅射法制备TiO2 薄膜 ,在不同温度下对薄膜进行退火 ,研究了薄膜晶体结构随退火温度的转化情况 .对TiO2 薄膜氧敏器件特性进行了测试 ,结果表明 ,在 4 0 0℃下灵敏度随氧分压增加最快 ,并且在 4 0 0℃具有最高的灵敏度 .得到的激活能为 0 4 1eV ,并对TiO2 薄膜氧敏器件的氧敏可逆性进行了讨论 .TiO 2 thin films were deposited by DC magnetron sputtering.Annealing was carried out from 300 to 1100℃,and the law of crystal phase transition with the annealing temperature was studied.Oxygen-sensing properties of TiO 2 thin films were measured,and the experiment results show that sensitivity increasing with the partial pressure of O 2 is fastest and the sensitivity is highest at 400℃.Activation energy was determined to be equal to 0 41eV,and the oxygen-sensing reversibility of TiO 2 thin films was also discussed.

关 键 词：磁控溅射 TIO2薄膜 氧敏特性 激活能 

分 类 号：TB383[一般工业技术—材料科学与工程]