光照下经H_2O_2处理的多孔硅的光致发光  

PHOTOLUMINESCENCE OF POROUS SILICON PROCESSED IN H_2O_2 UNDER ILLUMINATION

作　　者：林军[1] 张丽珠[1] 张伯蕊[1] 宗柏青[1] 秦国刚[1] 许振华[2] 

机构地区：[1]北京大学物理系,北京100871 [2]北京大学化学系,北京100871

出　　处：《物理学报》1994年第4期646-650,共5页Acta Physica Sinica

基　　金：国家自然科学基金资助的课题

摘　　要：光照下经H_2O_2处理的多孔硅其荧光强度随处理时间增加先增强后减弱,处理1min后,荧光强度达极大。未经H_2O_2处理的多孔硅在空气中激光照射下,其荧光退化很快,经H_2O_2处理的多孔硅在同样条件下,荧光退化明显变慢。红外吸收实验表明,H_2O_2处理后多孔硅与氧有关的振动大幅度增强,而各种si—H键则明显减少。对比红外吸收与荧光强度的变化,得出以下结论,多孔硅的可见光发射不是来自其表面的si—H键。The photoluminescence (PL) intensity of porous silicon in H2O2 under illtimina-tion increases first, and then decreases with increasing processing time, and the PL intensity reaches its maximum when the processing time is one minute. Under illumination in air, the PL degradation of porous silicon without processing is substa-ntia1, but that for the processed porous silicon gets much smaller. The Fourier-transform infrared (FTIR) absorption shows that the localized vibration related to oxygen increases greatly but all kinds of Si-H bonds decrease obviously. Contrasting the variation of the FTIR with that of the PL in the processes, we conclude that the luminescence does not come from the Si-H bonds on the surfaces of porous silicon.

关 键 词：多孔硅 光致发光 过氧化氢 荧光 

分 类 号：O472.3[理学—半导体物理]