量子点中浅施主的能谱结构  

SPECTRAL STRUCTURES OF SHALLOW DONORS IN QUANTUM DOTS

作　　者：陈曦[1] 朱嘉麟[1] 

机构地区：[1]清华大学现代应用物理系

出　　处：《物理学报》1994年第6期1008-1016,共9页Acta Physica Sinica

摘　　要：在有效质量近似下，使用线性变分方法计算了处于ＧａＡｓ－Ｇａ＿（１－ｘ）Ａｌ＿ｘＡ＿ｓ球形量子点中不同位置的浅施主杂质的能谱结构，讨论了能级的简并度和不同情况下的能级序，扩展了文献［１０］中所得到的结果。计算结果表明电子结构明显地依赖于量子点的半径和杂质离子所处的位置。计算结果还说明选择合适的基函数对于讨论量子点中问题的重要性。Using the hydrogenic-effective-mass theory,the spectral structure is calculatedemploying a linear variational method and presented for a hydrogenic shallow donorin a spherical quantum dot of GaAs-Ga_(1-x)Al_xAs with the donor ion located at arbi-tary position. It is an extension of the calculation in Ref.[ 10].The quantum-levelsequence and degeneracy for the single electron state in the dot are discussed.Resultsof calculations indicate that the quantum-level structures depend on the dot radiusand the ion position apparently,and that it is important to choose a proper set ofbase functions in the calculation.

关 键 词：量子点 施主杂质 能级 电子结构 

分 类 号：O471.1[理学—半导体物理]