快速退火后重掺硼的分子束外延层的电学特性  

STUDY OF ELECTRICAL PROPERTIES OF HEAVILY BORON DOPED Si EPILAYER AFTER RAPID THERMAL ANNEALING

作　　者：袁健[1] 陆 昉[1] 孙恒慧 卫星[1] 杨敏[1] 黄大鸣[1] 徐宏来[1] 沈鸿烈[1] 邹世昌[1] 

机构地区：[1]复旦大学李政道物理学综合实验室和物理系,复旦大学应用表面物理国家重点实验室,中国科学院上海冶金研究所信息功能材料国家重点实验室

出　　处：《物理学报》1994年第7期1137-1143,共7页Acta Physica Sinica

基　　金：国家自然科学基金;国家科学技术委员会基础研究及应用基础研究重大项目

摘　　要：对快速退火后用共蒸发Ｂ＿２Ｏ＿３方法实现重掺杂硼的硅分子束外延层的电学特性进行了研究．１１００℃退火可以使得外延层中载流子浓度提高４倍，空穴的霍耳迁移率与相同浓度下硅体材料的水平相当；外延层与衬底之间载流子浓度转变陡峭，获得了晶体质量良好的外延层．The effect of rapid thermal annealing on the electrical properties of heavilyboron doped Si epilayer grown by molecular beam epitaxy and coevaporation of B_2O_3is studied.It is found that an increment of carrier concentration by a factor of 4and an improvement of the Hall mobility equivalent to that of bulk Si at the samedoping concentration are achieved by annealing at 1100℃for 10s.The rapid ther- mal annealing process does not affect the steep distribution of carrier concentrationat the epilayer/substrate interface which differs about 6 order of magnitude acrossthe interface with the leading edge slope of 25-30nm/decade.

关 键 词：分子束外延 快速退火 电学性质 

分 类 号：TN304.054[电子电信—物理电子学]