网络状氮化硼纳米棒的生长研究  

Growth of Net-Shaped Boron Nitride Nanorods

作　　者：卢晓敏[1] 汪雷[1] 杨德仁[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《真空科学与技术学报》2004年第6期445-447,共3页Chinese Journal of Vacuum Science and Technology

基　　金：国家杰出青年科学基金 (No.60 2 2 5 0 10)

摘　　要：利用等离子体增强化学气相沉积 (PlasmaEnhancedChemicalVaporDeposition ,PECVD)法在单晶硅片上生长了氮化硼 (BN)材料。扫描电子显微镜 (ScanningElectronMicroscopy ,SEM)图 ,能量分散谱 (EnergyDispersiveSpectrum ,EDS)和傅里叶红外光谱 (Fouriertransforminfraredspectroscopy ,FTIR)表明 ,在一定的生长条件下BN薄膜呈现由纳米棒搭构而成的网络状结构。纳米棒的直径在几十到几百纳米范围 ,长度为微米量级。对这种特殊形貌的生长机理进行了探讨。Boron nitride(BN)nanorods,grown on silicon substrate by plasma enhanced chemical vapor deposition (PECVD),were characterized with scanning electron microscopy ( SEM),energy dispersive spectrum (EDS) and Fourier transform infrared spectroscop y (FTIR).The results show that under favorable conditions the BN nanorods,interc onnected in an irregular net-shape,can be synthesized with diameters ranging fro m several tens to hundreds of nm and a length of a few μm.The growth mechanism( s) is also thetatively discussed.

关 键 词：等离子体增强化学气相沉积 纳米棒 氮化硼 PECVD 单晶硅片 网络 微米 傅里叶红外光谱 FTIR 薄膜 

分 类 号：TB383[一般工业技术—材料科学与工程] TN304.055[电子电信—物理电子学]