磁控溅射镱薄膜的制备及压阻特性  

Piezoresistance Characteristics of Ytterbium Thin Film Grown by Magnetron Sputtering

作　　者：滕林[1] 杨邦朝[1] 杜晓松[1] 周鸿仁[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,成都610054

出　　处：《真空科学与技术学报》2004年第6期472-474,480,共4页Chinese Journal of Vacuum Science and Technology

基　　金：军事电子预研基金资助 (No.AW0 3 0 412 )

摘　　要：使用直流磁控溅射的方法在聚酰亚胺上制备镱薄膜 ,XRD分析薄膜的晶体结构 ,SEM表征薄膜的形貌 ,利用一级轻气炮进行了 1 5GPa～ 2 5GPa的冲击加载压阻测试。研究结果表明 ,压阻系数依赖于薄膜的晶粒尺寸 ,经 30 0℃热处理 1h ,镱薄膜晶粒长大 ,薄膜结构更为致密 ,膜内缺陷减少 ,压阻系数有明显提高。The structures and morphology of ytterbium thin films,grown on polyimide sheets by DC magnetron sputtering,were studied with X-ray diffraction (XRD) and scanni ng electron microscopy (SEM).Piezo-resistance characteristics of the ytterbium films under impacts ranging from 1.5 GPa to 2.5 GPa was evaluated in the singl e stage gas gun.The results show that the piezo-resistance coefficient k de pends on grain size of the film.We found that one hour annealing at 300℃ signif icantly improves the ytterbium film quality,by enlarging its grain size,betterin g its compactness and reducing its density of defects.

关 键 词：薄膜结构 系数 直流磁控溅射 晶体结构 表征 冲击加载 形貌 晶粒尺寸 晶粒长大 热处理 

分 类 号：TB383[一般工业技术—材料科学与工程] O484[理学—固体物理]