退火处理对ZnO薄膜发光特性的影响  

Annealing Processing Effect on the Photoluminescence of ZnO Film

作　　者：苏凤莲[1] 彭观良[1] 邹军[1] 宋词[1] 杭寅[1] 徐军[1] 周圣明[1] 

机构地区：[1]中国科学院上海光学精密机械研究所

出　　处：《人工晶体学报》2005年第1期107-111,共5页Journal of Synthetic Crystals

摘　　要：用脉冲激光沉积法(PLD)在MgO(100)、α Al2O3 (0001)和MgAl2O4 (111)衬底上沉积了ZnO薄膜,测量了它们的发射光谱,观察到 430nm的蓝光发射,并研究了退火、衬底和激发波长对ZnO薄膜这一蓝光发射的影响。指出ZnO薄膜中 430nm的蓝光发射是由锌填隙原子缺陷能级到价带顶能级间的跃迁以及电子从氧空位浅施主能级到价带顶能级间的跃迁两种机理共同作用的结果。在MgO衬底上沉积的ZnO薄膜在 350nm光激发下蓝光发射峰最强。The emission spectra of the ZnO films deposited on MgO(100), α-Al2O3(0001) and MgAl2O4 (111) substrates by pulsed laser deposition (PLD) were studied. A 430 nm blue emission peak was observed. The intensity changes of the blue peak of the annealed ZnO films were investigated. It is concluded that the blue emission originates from the interstitial Zn and the transition of electrons from the shallow donor level of the oxygen vacancies to the valence band. The excitation wavelength and substrates also have effects on the optical properties of the ZnO films. The ZnO film deposited on MgO substrate and excited with 350 nm light shows the strongest blue emission.

关 键 词：蓝光发射 ZNO薄膜 衬底 原子 价带 激发波长 脉冲激光沉积法 发光特性 光激 缺陷能级 

分 类 号：O484[理学—固体物理] TN304.21[理学—物理]