Si(100)衬底上PLD法制备高取向度AlN薄膜  

Highly-oriented A1N Thin Films on Si(100) Substrates by Pulsed Laser Deposition

作　　者：张霞[1] 陈同来[1] 李效民[1] 

机构地区：[1]中国科学院上海硅酸盐研究所高性能陶瓷和超微结构国家重点实验室,上海200050

出　　处：《无机材料学报》2005年第2期419-424,共6页Journal of Inorganic Materials

基　　金：国家973项目(2002CB613306)

摘　　要：采用脉冲激光沉积法(PLD),以KrF准分子为脉冲激光源,Si(100)为衬底,同时引 入缓冲层TiN和Ti0.8Al0.2N,制备了结晶质量优异的A1N薄膜,X射线衍射(XRD)及反射 式高能电子衍射(RHEED)分析表明A1N薄膜呈(001)取向、二维层状生长.研究发现,薄膜 的生长模式依赖于缓冲层种类,直接在Si衬底上或MgO／Si衬底上的A1N薄膜呈三维岛状生 长;而同时引入缓冲层TiN和Ti0.8Al0.2N时,A1N薄膜呈二维层状生长.此外,激光能量密 度大小对A1N薄膜的结晶性有显著的影响,激光能量密度过大,薄膜表面粗糙,有颗粒状沉积 物生成.在氮气气氛中沉积,能使薄膜的取向由(001)改变为(100).Highly crystalline quality AlN thin films were successfully grown on Ti0.8Al0.2N/TiN-buffered p-Si(100) substrates by pulsed laser deposition (laser source: KrF). X-ray diffraction (XRD) and reflective high energy electron diffraction (RHEED) were employed to characterize the as-grown films. The results show that AlN thin films are (001) oriented and grown with 2D layer growth mode. The growth modes of thin films rely on the kinds of buffer layers: AlN thin films on Si wafers or MgO/Si substrates are 3D island grown; whereas those on Ti0.8Al0.2N/TiN/Si substrates are 2D layer grown. In addition, the laser energy density has considerable effects on the crystalline quality of AlN thin films: over high energy leads to rough surface and big particles. The partial nitrogen pressure can make AlN thin films (100) orientation instead of (001) orientation.

关 键 词：脉冲激光沉积 ALN薄膜 缓冲层 

分 类 号：O482[理学—固体物理]