φ300mm的大直径直拉单晶硅勾形磁场下生长的数值模拟  

Numerical Simulation of a Czochralski Silicon Crystal Growth with a Large Diameter 300mm Under a Cusp Magnetic Field

作　　者：宇慧平[1] 隋允康[1] 张峰翊[2] 常新安[3] 安国平[1] 

机构地区：[1]北京工业大学机电学院,北京100022 [2]北京有色金属研究总院,北京100088 [3]北京工业大学材料学院,北京100022

出　　处：《无机材料学报》2005年第2期453-458,共6页Journal of Inorganic Materials

基　　金：北京工业大学青年科技基金(JQ0105200372)

摘　　要：直径300mm硅片的生产技术是当今硅材料生产研究的重要方向之一,而晶体生长 界面的形状、温度分布、晶体中氧的浓度和均匀性等对熔体流动状态十分敏感,采用实验的方 法来测量熔体的流动、温度场分布是很困难的,因此很难通过实验的方法获得熔体的流动是如 何影响晶体生长的质量的,而数值模拟能提供熔体流动、温度分布等详细内容,为单晶硅的生 长提供有利的指导.本文采用低雷诺数的K-ε紊流模型,对直径300mm的大直径单晶硅生 长进行了数值模拟,通过熔体在有、无勾形磁场作用时的流场、温度场的分析,阐明了勾形磁 场影响熔体流动的机理.The growth of a 300mm large diameter single crystal silicon is one of the active branches in silicon material research and production. It is known from experiments that the shape of the growth interface, the temperature distribution in the melt etc. are sensitive to the melt motion. However it is quite difficult to experimentally visualize the convection of melt, temperature and oxygen field. Thus it is extremely difficult to quantitatively determine how melt motion influence the quality of crystal by experiments. Numerical simulations can provide detailed . information of melt motion, distribution of temperature and so on, which can guide the growth of silicon. In this paper, a low Reynolds number K-ε model was used for the simulation of a 300mm large diameter silicon crystal growth. The velocity field and temperature field with and without a cusp magnetic field were visualized. Through this study how a cusp magnetic field influences the melt convection was clarified.

关 键 词：直拉法 勾形磁场 数值模拟 

分 类 号：O78[理学—晶体学]