LBL法制备Cu_3SbS_4薄膜  

Preparation of Cu_3SbS_4 Thin Films with LBL Method

作　　者：杜金会[1] 于振瑞[1] 张加友[1] 

机构地区：[1]军事交通学院基础部,天津300161

出　　处：《电子元件与材料》2005年第4期24-27,共4页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(50172061)

摘　　要：针对水溶液化学沉积法沉积过程复杂且难于控制的缺点,利用LBL(layer-by-layer)法,在玻璃基片上制备出了Cu3SbS4薄膜。即首先在玻璃基片上沉积Sb2S3薄膜,然后再在其上制备CuS薄膜,最后进行退火处理。探讨了薄膜的制备机理、生长速度、结构特性和光学特性。制备的薄膜为多晶Cu3SbS4(四方晶系)结构,厚度为344nm,直接光学带隙约为0.47eV。Cu3SbS4 thin films were prepared on glass substrate with LBL (layer-by-layer) method, in which Sb2S3 thin films were first deposited on glass substrate, and then CuS thin films were consecutively deposited on it, at last, Cu3SbS4 thin films were formed by thermally annealing the bilayer structures at low temperature. The mechanism of the methods was explored. The growing rate, structural, and optical properties of the films were also studied. The annealed films are of polycrystalline Cu3SbS4 with tetragonal system, their thickness and direct optical band gap are 344 nm and 0.47 eV, respectively.

关 键 词：复合材料 Cu3SbS4薄膜 LBL(layer—by—layer)法 结构特性 光学特性 

分 类 号：TN304.26[电子电信—物理电子学] TN304.25