AlGaN/GaN HEMT研制及特性分析  

Development and characteristics of AlGaN/GaN HEMT

作　　者：王冲[1] 郝跃[1] 张进城[1] 

机构地区：[1]西安电子科技大学微电子研究所,陕西西安710071

出　　处：《西安电子科技大学学报》2005年第2期234-236,共3页Journal of Xidian University

基　　金：国家重大基础研究项目(973)资助项目(2002CB311904);国家部委预研资助项目(41308060106)

摘　　要：以蓝宝石为衬底研制出栅长1μmAlGaN/GaNHEMT.在室温下,测试该器件显示出良好的输出特性和肖特基伏安特性,最大跨导160mS/mm,栅压1V下饱和电流720mA/mm,击穿电压大于50V.分析了几个关键工艺对器件特性的影响,指出较大的欧姆接触电阻(3 19Ω·mm)限制了器件性能进一步提高,需提高肖特基接触的势垒高度.AlGaN/GaN HEMTs grown on sapphire substrates with 1 μm gate-length have been fabricated. These devices exhibit the peak extrinsic Transconductance of 160 mS/mm and the saturation drain current density 720 mA/mm at 1 V and the breakdown voltage above 50 V. Ideal Source-drain current-voltage characteristics and Schottky characteristics of AlGaN/GaN HEMT are revealed at RT. Based on the analysis of the effect of some key processes on characteristics. The methods and directions in improving the performances of these devices are proposed in this paper.

关 键 词：微波功率器件 ALGAN/GAN 高电子迁移率晶体管 

分 类 号：TN325.3[电子电信—物理电子学]