AlGaInP/GaAs外延层的倒易空间图分析  

THE ANALYSIS ON THE RECIPROCAL SPACE MAPPING OF THE AlGaInP/GaAs EPITAXIAL LAYER

作　　者：李华兵[1] 范广涵[1] 王浩[1] 吴文光[1] 陈贵楚[1] 陈练辉[1] 

机构地区：[1]华南师范大学光电子材料与技术研究所,广东广州510631

出　　处：《华南师范大学学报（自然科学版）》2005年第1期55-59,共5页Journal of South China Normal University(Natural Science Edition)

基　　金：国家科技攻关计划基金(00-068)

摘　　要：介绍了倒易点二维图的概念,分析了AlGaInP/GaAs外延层的倒易点二维图,阐明其倒易点二维图的展宽方向和原因,获得了应变及晶面弯曲等方面的信息,为优化AlGaInP四元系发光二极管的外延工艺提供了更丰富的信息.This paper explained the concepts of reciprocal lattice point and reciprocal space mapping, elaborated the extending direction and reason of reciprocal space mapping. Through analysis on the reciprocal space mapping of AlGaInP/GaAs Epitaxial Layer,the deforming informations and strains of the lattice and composition of the AlGaInP/GaAs Epitaxial Layer were obtained. This helps to optimize the MOCVD gowth procedure of AlGaInP/GaAs Epitaxial Layer.

关 键 词：AlGaInP/GaAs 外延层 倒易空间图 发光二极管 二维图 外延工艺 四元系 信息 

分 类 号：TN322.8[电子电信—物理电子学] TN304.23