Pb(Sc_(1/2)Ta_(1/2))O_3铁电薄膜的制备及性能研究  

The Preparation and Properties of Pb(Ta_(1/2)Sc_(1/2))O_3 Thin Films

作　　者：刘梅冬[1] 曾亦可[1] 邓传益[1] 姜胜林[1] 李元昕[1] 李艳秋[2] 刘少波[2] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074 [2]中国科学院电工研究所,北京100080

出　　处：《压电与声光》2005年第2期142-144,159,共4页Piezoelectrics & Acoustooptics

基　　金：国家"八六三"计划先进制造与自动化技术领域资助项目(2003AA404150);国家"八六三"计划新材料领域资助项目(2002AA325080);国家自然科学基金重大研究计划资助项目(90201028)

摘　　要：用Pb(CH3COO)2·3H2O、Sc(CH3COO)3·xH2O和C10H25O.5Ta为原材料,乙二醇甲醚为溶剂,用改进的溶胶-凝胶(Sol-Gel)法在Pt/Ti/SO2/Si基片上成功地制备出ABO3钙钛矿型结构Pb(Sc1/2Ta1/2)O3(PST)铁电薄膜。该薄膜是研制铁电微型致冷器和非致冷热释电红外焦平面阵列的优选材料。对制备出的PST薄膜进行了介电、铁电和热释电性能测试。测试得到在1kHz下PST薄膜的介电常数为570,介电损耗为0.02。铁电性能良好,剩余板化强度为3.8～6.0μC·cm-2,矫顽场为40～45kV·cm-1。热释电系数为4.0×10-4～20×10-4Cm-2K-1。Pb(Sc_(1/2)Ta_(1/2))O_3(PST)ferroelectric thin films with ABO_3 perovskite structure on Pt/Ti/SiO_2/Si substrate have been prepared by improved Sol-Gel process. Pb(CH_3COO)_2·3H_2O, Sc(CH_3COO)_3·xH_2O and C_(10)H_(25)O_5Ta are used as raw materials. CH_3OCH_2CH_2OH is used as solvent. PST thin films are excellent materials for preparing ferroelectric miniature refrigerator and uncooled pyroelectric infrared focal plane arrays.The dielectric, pyroelectric and ferroelectric properties of PST thin tilms were measured. The ε_r and tan θ of PST thin films are 570 and 0.02, respectively. The P_r and Ec of PST thin films are 3.8～6.0 μCcm^(-2) and 40～45 kVcm^(-1), respectively, The pyroelectric coefficient of PST thin films are 4.0×10^(-4)～ 20×10^(-4) Cm^(-2)K^(-1).

关 键 词：铁电薄膜 Pb(Sc1/2Ta1/2)O3 溶胶-凝胶 铁电性 热释电性 

分 类 号：TN304[电子电信—物理电子学]