基于溶胶-凝胶技术的PZT厚膜快速成膜研究  

Preparation of PZT Thick Film by a High Speed Sol-gel Method

作　　者：陈超[1] 褚家如[1] 鲁健[1] 

机构地区：[1]中国科学技术大学精密机械与精密仪器系,合肥230027

出　　处：《微细加工技术》2005年第1期58-62,共5页Microfabrication Technology

摘　　要：采用快速成膜技术在Pt(111)/Ti/SiO2/Si(100)衬底上成功制备了总厚度为2 56μm,结构致密且无裂纹的Pb(Zr0 53,Ti0 47)O3铁电厚膜。研究了快速成膜技术中热分解温度对薄膜结晶取向的影响,分析了在相同退火条件下,分别采用不同热分解温度制备得到的薄膜的结晶状况。X射线衍射分析表明,采用350℃热分解温度得到的薄膜为单一钙钛矿相结构,且沿(100)晶向强烈取向;薄膜断面的扫描电子显微镜照片表明,该薄膜结构致密,晶粒呈现明显的柱状生长;薄膜的电学性能测试结果显示,薄膜的相对介电常数高达819,剩余极化为15μC/cm2,矫顽场强为39kV/cm。Crack free dense PZT thick films with total thickness of 2.56 μm were successfully prepared by a modified sol-gel method on Pt(111)/Ti/SiO2/Si(100) substrate. To study the effects of pyrolysis temperature on the film orientation, we analyzed the PZT films which were fabricated with different pyrolysis temperature and same annealing condition. The XRD patterns show that strongly (100) oriented PZT films can be obtained when the pyrolysis temperature of 350°C is applied. The SEM image of the cross-sectional microstructure of PZT films show that the films are dense and the film grains exibit an obvious columnar growth. The films exibit good dielectric properties and the Pr of the film is 15 μC/cm2 and the Ec is 39 kV/cm.

关 键 词：Pb(Zr0.53 Ti0.47)O3 铁电薄膜 溶胶-凝胶法 

分 类 号：TN305.7[电子电信—物理电子学]