发展中的绝缘体上硅材料技术  

The Developing Silicon-on-lnsulator Material Technology

作　　者：蔡永才[1] 

机构地区：[1]四川固体电路研究所

出　　处：《微电子学》1989年第5期1-7,共7页Microelectronics

摘　　要：在高可靠、抗核加固IC和亚微米CMOSFET VLSI电路应用中,绝缘体上硅 (SOI)是一种很有前途的材料技术。本文对形成SOI的各种技术及其优缺点和目前状况以及未来前景作了评述。对国内的SOI研究作了简单的介绍。Silicon-On-Insulator is a very promising material in applications to the fabrication of highly reliable,radiation hard ICs and the future submicron CMOS FET V-LSI ICs. In this paper, a review of possible techniques fcr the formation of SOI structures, their acvantsges and disacvantages, their current status and fu- ture prospects is presented. The SOI investigation activities in China are also briefly introduced.

关 键 词：绝缘体上硅 半导体材料 SOI技术 

分 类 号：TN304.055[电子电信—物理电子学]