PECVD Sin/SiO_2双层膜的应力特性  

A Study of Stress in PECVD SiN/SiO_2 Film

作　　者：杨绪华[1] 孙青[1] 

机构地区：[1]西安电子科技大学微电子所

出　　处：《微电子学与计算机》1989年第4期9-11,共3页Microelectronics & Computer

摘　　要：采用激光束偏转法研究PECVD SiN及SiO_2的应力特性,结果表明,SiN膜的应力较大,在SiN/Si间插入一层SiO_2膜,能有效地减小SiN膜的应力。with The laser beam deflection method, the stress of PECVD SiN and SiO_2 thin films has been studied. The results show that the stress is bigger in SiN than in SiO_2. If SiO_2 films are inserted between the SiN films and Si substrate, the stress of SiN films can be reduced

关 键 词：SiN膜 SIO2膜 应力特性 PECVD法 

分 类 号：TN304.055[电子电信—物理电子学]