不同偏置条件下Si—SiO_2界面电离辐照的XPS研究  

Study Of γ-ray Irradiation Induced si-sio_2 Interface With XPS

作　　者：刘昶时[1] 吾勤之[1] 张玲珊[1] 

机构地区：[1]中国科学院新疆物理研究所

出　　处：《微电子学与计算机》1989年第12期5-7,共3页Microelectronics & Computer

基　　金：中国科学院青年奖励基金

摘　　要：应用灵敏的表面分析技术XPS(x射线光电子能谱)对不同偏置条件下γ射线辐照的Si-SiO_2界面进行断层分析表明,SiO_2态下硅的2p结合能信号强度随辐照剂量的增加而减少,谱峰半宽则增加;且在正偏电场下辐照样品的信号强度明显低于未辐照样品及在负偏电场下辐照的样品,而谱峰半宽情形则相反。文中以应力键梯度模型为基础对实验结果作了解释。Using the technique of XPS, the Si-SiO_2 interfaces in different bias field are studied. The result of the XPS fault analysis indicated that as the irradiation dose increased, the intensities of the silicon bond energy in Sislcon dioxide state decreased. The semi-width of p(?)ak increased with the irradiadiation dose. Evidently, under Positive bias fieid, the intensities of samples were Iower than under negative bias field during irradiation, while the semi-width of pe(?)k were in the contrary. Bascedon the model of the bond strain gradient, the results of the experiments are explained.

关 键 词：MOS器件 Si-SiO3界面 电离辐射 XPS 

分 类 号：TN386.1[电子电信—物理电子学]