电离辐照与界面态  

Ionizing Radiaticn and Interface State

作　　者：宋钦岐 

机构地区：[1]骊山微电子学研究所

出　　处：《微电子学与计算机》1989年第12期11-15,共5页Microelectronics & Computer

摘　　要：本文详细介绍电离辐照在Si—SiO_2界面产生的界面态。通过对铝栅和硅栅MOS器件辐照产生的界面态与时间和偏压之关系的研究,发现存在三种类型的界面态,即缓慢建立的、快速建立的和瞬时建立的界面态,并用已经报道的模型对这些界面态产生的机理作了初步说明。The ionizing radiation-induced Si-SiO_2 interface-state is trodu(?)ed in detaif.After studying the relationship between radiationinduced interface-state and time and bias valtage in Al-gate and Si-gate MOS devices, we find there are three types of interface-state, that is slow build-up interface-state, rapid build-up interfece-state and prompt build-up interface-state. The build-up mechanisms of these types of interface-state are explained by publish ied mode

关 键 词：电离辐照 界面态 MOS器件 SI-SIO2 

分 类 号：TN386.1[电子电信—物理电子学]