铁电薄膜及铁电存储器研究  

Ferroelectric Films and Ferroelectric Random Access Memory

作　　者：武德起[1] 刘保亭[1] 闫正[1] 闫常瑜[1] 赵庆勋[1] 

机构地区：[1]河北大学物理科学与技术学院,河北保定071002

出　　处：《河北大学学报（自然科学版）》2005年第2期225-230,共6页Journal of Hebei University(Natural Science Edition)

基　　金：河北省自然科学基金项目(E2005000130);河北省科技攻关项目(04213579);河北大学人才引进博士基金项目(B0406030);国家人事部留学人员择优资助项目

摘　　要：综述了铁电薄膜以及铁电存储器的发展,讨论了铁电薄膜制备方法、结构和物理性能表征,并结合作者的前期工作,详细讨论了用于铁电薄膜与硅衬底集成的导电阻挡层问题,指出了铁电薄膜研究中需重点解决的一些问题.Ferroelectric film and its applications,including the popular methods for ferroelectric film preparation and the techniques for characterizing the structural and physical properties of ferroelectric films and capacitors are reviewed in this paper. Moreover,the conducting barrier layer for integrating ferroelectric films with silicon wafers, coupled with our previous work, has been discussed in details. Finally,some of the challenges for ferroelectric film and its applications have been pointed out.

关 键 词：铁电薄膜 集成铁电体 铁电存储器 

分 类 号：O469[理学—凝聚态物理] O484[理学—电子物理学]