退火温度对ZnO薄膜结构和发光性能的影响  

Influence of Annealing Temperature on Structural and Optical Properties of ZnO Thin Films 

作　　者：温战华[1] 王立[1] 方文卿[1] 蒲勇[1] 罗小平[1] 郑畅达[1] 戴江南[1] 江风益[1] 

机构地区：[1]南昌大学教育部发光材料与器件工程研究中心,南昌330047

出　　处：《Journal of Semiconductors》2005年第3期498-501,共4页半导体学报（英文版）

基　　金：国家高技术研究发展计划资助项目(批准号:2003AA302160)~~

摘　　要：采用常压金属有机物化学气相淀积法在(0001)Al2O3衬底上生长出高质量ZnO单晶膜，在空气中进行了710～860℃不同温度的退火处理．用X射线双晶衍射、光致发光法研究了退火温度对ZnO薄膜的结构、发光性能的影响．ZnO(002)面X射线双晶ω扫描曲线的半高宽(FWHM)随退火温度的升高变小，770℃后基本保持不变，ZnO(102)面双晶。扫描曲线的FWHM一直变小．770℃退火后ZnO样品X射线ω-2θ扫描曲线中出现ZnO2(200)衍射峰．同时，光致发光测试表明，随着退火温度升高，带边发光强度减弱，与深能级有关的绿带发光出现并逐渐增强．通过ICP刻蚀，去除退火后样品的表面层，ω-2θ扫描曲线中ZnO2(200)衍射峰和PL谱中绿带发光均消失，表明ZnO2相和深能级缺陷在样品表面．Undoped ZnO single crystal films are deposited on c plane sapphire substrates by atmosphere metal organic chemical vapor deposition.Thermal annealing of ZnO thin films is carried out in air from 710 to 860℃,and the effect of annealing on the structural and optical properties of ZnO films is characterized by DCXRD and PL spectra.The results show the full width at half maximum(FWHM) of ZnO(002) ω rocking curve first decreases with annealing temperature up to 770℃ and then keep unchanged as annealing temperature further increasing.While the FWHM of (102) ω rocking curve decreases with annealing temperature up to 860℃.It is found by the X ray ω 2θ scan that the new phase ZnO 2 occurs at annealing temperature of 770℃.Room temperature photoluminescence spectra reveal that the band edge emission becomes weaker and disappears at 860℃;Meanwhile,the deep level emission gets stronger with the annealing temperature increasing.The ZnO 2 phase and green band vanish in the ω 2θ curve and the PL spectra respectively,as the surface layer of annealed ZnO is etched by ICP,which indicates ZnO 2 phase and the defects related to the green band emission only exist in the surface layer of ZnO films.

关 键 词：金属有机物化学气相沉积 氧化锌 X射线双晶衍射 光致发光谱 

分 类 号：TN304.21[电子电信—物理电子学]