基于SOI硅片研制新型P^+-I-N^+双注入磁敏差分电路  

New type of P^+-I-N^+ double injection magneto-sensitive difference circuit developted on SOI

作　　者：田凤军[1] 温殿忠[1] 

机构地区：[1]黑龙江大学敏感技术研究所,黑龙江哈尔滨150080

出　　处：《传感器技术》2005年第4期84-85,88,共3页Journal of Transducer Technology

基　　金：国家自然科学基金资助项目(60076027)

摘　　要：阐述基于SOI硅片制造新型P+ I N+双注入磁敏差分电路的设计原理和制造工艺。构成新型P+ I N+双注入磁敏差分电路的磁敏三极管的复合区采用MEMS中的各向异性腐蚀技术进行设置,给出了这种复合区的复合机理。实验结果表明:此种三极管具有磁灵敏度高、噪声低和可靠性高的特点。因此,由这种新型磁敏三极管构成的差分电路具有温度漂移小的优点。New type of P^+-I-N^+ double injection magneto-sensitive difference circuit is based on SOI,its design principle and process are expatiated,and the recombination region of the magneto-transistor is set up by anisotropic etching technology in MEMS.At the same time,the recombination mechanism of the recombination region is given.The result of experiment shows that this kind of transistor is provided with high magnetic sensitivity,low noise and high reliability.So,the difference circuit consisted of this transistor has merit of small temperature shift.

关 键 词：磁敏三极管 低噪声 微机电系统 各向异性腐蚀 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]