In掺杂对ZnO薄膜结构及光学特性的影响  

Effect of Indium Content on Structural and Photoluminescent Properties of Doped ZnO Thin Films

作　　者：朋兴平[1] 王印月[1] 方泽波[1] 杨映虎[1] 

机构地区：[1]兰州大学物理科学与技术学院,兰州730000

出　　处：《Journal of Semiconductors》2005年第4期711-715,共5页半导体学报（英文版）

基　　金：甘肃省自然科学基金资助项目(批准号:ZS011A25050C)~~

摘　　要：通过射频反应溅射法在硅衬底上制备了具有c轴择优取向和小晶格失配的In掺杂ZnO薄膜.在室温下测量样品的光致发光(PL)光谱,观察到波长位于415nm(3.02eV)和430nm(2.88eV)附近的蓝紫发光双峰.研究了不同In掺杂量对ZnO薄膜的结构和发光特性的影响.当In片面积为靶总面积的3%时,样品具有高度的c轴择优取向和较小的晶格失配(0.16%);同时在PL谱中观察到波长位于415nm(3.02eV)和433nm(2.86eV)处的强蓝紫光双峰.Indium-doped zinc oxide films with c-axis preferred orientation and small lattice mismatch are deposited on silicon substrates by RF co-reactive sputtering.A blue-violet photoluminescent bi-peaks located at about 415nm and 430nm are observed when excited with 340nm light at room temperature.The effect of In doping on the structural and photoluminescent properties of ZnO thin films is investigated.It is found that the sample has a highly c-axis orientation and small lattice mismatch (0.16%) and a stronger blue-violet emission bi-peak at 415nm and 433nm in PL spectra when the percentage area of indium slices is 3%.

关 键 词：ZNO薄膜 In掺杂 光致发光谱 射频反应溅射 

分 类 号：TN304.21[电子电信—物理电子学]