N-Al共掺ZnO薄膜的p型传导特性  

p-Type Conduction in N-Al Codoped ZnO Thin Films

作　　者：吕建国[1] 叶志镇[1] 诸葛飞[1] 曾昱嘉[1] 赵炳辉[1] 朱丽萍[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《Journal of Semiconductors》2005年第4期730-734,共5页半导体学报（英文版）

基　　金：国家自然科学基金资助项目(批准号:90201038)~~

摘　　要：利用直流反应磁控溅射技术制得N Al共掺的p型ZnO薄膜,N2O为生长气氛.利用X射线衍射(XRD),Hall实验,X射线光电子能谱(XPS)和光学透射谱对共掺ZnO薄膜的性能进行研究.结果表明,薄膜中Al的存在显著提高了N的掺杂量,N以N Al键的形式存在.N Al共掺ZnO薄膜具有优良的p型传导特性.当Al含量为0.15wt%时,共掺ZnO薄膜的电学性能取得最优值,载流子浓度为2.52×1017cm-3,电阻率为57.3Ω·cm,Hall迁移率为0.43cm2/(V·s).N Al共掺p型ZnO薄膜具有高度c轴取向,在可见光区域透射率高达90%.N-Al codoped p-type ZnO thin films are prepared on glass substrates by DC reactive magnetron sputtering in N_2O atmosphere.The properties of codoped films are examined by X-ray diffraction,Hall measurement,X-ray photoelectron spectroscopy,and transmission spectra.The results show that the nitrogen incorporation is enhanced evidently due to the presence of aluminum in codoped films,and that N exists as N-Al pairs in ZnO.The N-Al codoped ZnO film (0.15wt% Al) had a good p-type conduction with a resistivity of 57.3Ω·cm,carrier concentration of 2.52×10 17cm -3 and Hall mobility of 0.43cm 2/(V·s) at room temperature.The N-Al codoped p-type ZnO films also possess a good crystallinity with c-axis orientation and a high transmittance about 90% in the visible region.

关 键 词：N—Al共掺ZnO薄膜 P型传导 N2O生长气氛 直流反应磁控溅射 

分 类 号：TN304.21[电子电信—物理电子学]