Mo_2C膜脱附激活能随沉积温度的变化规律  

Discussion on Variation of Activation Energy on Deposition

作　　者：郑瑞伦[1] 张浩波[2] 

机构地区：[1]西南师范大学物理学院,重庆400715 [2]重庆广播电视大学基础部,重庆400039

出　　处：《重庆大学学报（自然科学版）》2005年第4期106-109,共4页Journal of Chongqing University

基　　金：国家自然科学基金资助项目(10147207)

摘　　要：介绍了用金属有机气相沉积(MOCVD)制备Mo2C膜的过程和对膜的颗粒粒径的测量结果,建立物理模型,导出粒子脱附激活能的计算公式,探讨了Mo2C膜的脱附激活能随沉积温度的变化。结果表明:沉积温度低于380℃时,Mo2C膜的脱附激活能随温度升高而增大较快;而高于380℃时,激活能随温度升高而增大的速度变小。Procedure for preparing Mo 2C thin film by metalorganic chemical deposition(MOCVD) and mesure data on grain sizes are provided. A physical model is given to caculate the activiate energy, then the variation of activiate on deposition temperation is discussed. The results show that with temperature increasing, the activiation energy increases sharply at the temperature lower than 380 ℃, and increases lightlog at the temperature higher than 380 ℃.

关 键 词：MO2C膜 脱附激活能 沉积温度 

分 类 号：O484.1[理学—固体物理] O484.4[理学—物理]