不同参数溅射的ZnO薄膜硫化后的特性  

The properties of the as-sputtered ZnO films under differentdeposition parameters after sulfidation

作　　者：张仁刚[1] 王宝义[1] 张辉[1] 马创新[1] 魏龙[1] 

机构地区：[1]中国科学院高能物理研究所核分析技术重点实验室,北京100049

出　　处：《物理学报》2005年第5期2389-2393,共5页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :10 2 75 0 77)资助的课题 .~~

摘　　要：采用直流反应磁控溅射法在玻璃和石英衬底上沉积了ZnO薄膜 ,然后将它们在H2 S气流中硫化得到ZnS薄膜 .用x射线粉末衍射仪 (XRD)、扫描电子显微镜 (SEM)和UV VIS透过光谱对ZnS薄膜样品进行了分析 .结果表明 ,该ZnS薄膜为六角晶体结构 ,沿 (0 0 2 )晶面择优取向生长 ,其结晶状态和透过光谱与工作气压、Ar O2 流量比密切相关 .当气压高于 1Pa时 ,得到厚度很小的ZnS薄膜 ;而气压低于 1Pa时 ,沉积的ZnO薄膜则不能全部反应生成ZnS .另外 ,当Ar O2 流量比低于 4∶1或高于 4∶1时 ,结晶状态都会变差 .此外 ,由于ZnS薄膜具有高的沿 (0 0 2 )晶面择优取向的生长特性 ,使得退火或未退火ZnO薄膜硫化后的晶粒尺寸变化很小 .ZnS films are produced on the glass and quartz substrates by sulfidation of the as-sputtered ZnO films in the H2S-H-2-N-2 mixture. The properties of the films are characterized by using the XRD, SEM and transmission measurements. The results show that the ZnS films with a hexagonol structure have a (002) preferred orientation. The crystallinity and optical transmission spectra of the ZnS films are related to working pressure and Ar/O-2 ratio during the deposition of the ZnO films. At the pressure > 1 Pa, the thickness of the ZnS films is very small, while at the pressure < 1 Pa the ZnO films are not converted completely to ZnS phase. In addition, an Ar/O-2 ratio higher or lower than 4: 1 will leads to the poor crystalline ZnS films. Also it is found that the ZnS films formed from the unannealed ZnO films almost have the same grain size as those formed from the in-air annealed ZnO films, due to the high (002) preferred orientation during the growth of the ZnS films.

关 键 词：硫化锌薄膜 磁控溅射 氧化锌硫化 太阳电池 

分 类 号：O484.4[理学—固体物理]