Ga近硅表面连续低浓度分布特性分析  

Analysis of Continuous Low Concentration Distribution of Ga Impurity at Nearby Si Surface

作　　者：裴素华[1] 修显武[2] 孙海波[3] 黄萍[1] 于连英[1] 

机构地区：[1]山东师范大学,山东济南250014 [2]山东大学,山东济南250010 [3]山东交通学院,山东济南250013

出　　处：《稀有金属材料与工程》2005年第4期565-568,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金(69976019)资助项目

摘　　要：为进一步揭示Ga在SiO_2/Si系统下的完整扩散特性和分布行为,利用扩展电阻(SRP)分析方法,对恒定源、限定源,二次氧化(指磷扩散的再分布过程)不同温度和气氛,Ga在近硅表面微区域浓度连续性变化状态进行了系统研究。结果表明,恒定源掺杂过程有Ga的低浓度区形成;限定源再分布过程Ga出现反扩散特性;二次氧化过程Ga产生异常分凝特性。上述分布行为的综合效果,导致近硅表面Ga的浓度处于耗尽状态。对Ga的表面耗尽,可通过适当的工艺方法给予补偿,因此Ga基区晶体管的电学性能仍然优于同类产品。In order to further reveal the whole diffusion characters and distribution behaviors of Ga impurity in SiO2/Si system, the changeable concentration laws of Ga impurity at puny region of the nearby Si surface, under different temperatures and different atmosphere in invariable resource diffusion, finite resource diffusion and re-oxygenation process are investigated by SRP. The results are as follows: the low concentration region forms in invariable resource diffusion process; the reversed diffusion character happens in finite resource diffusion process; the exceptional segregation comes into being in re-oxygenation process.

关 键 词：GA 近硅表面 浓度分布 

分 类 号：TN304[电子电信—物理电子学]