多层溅射方法制备WSi_x／Si薄膜技术研究  

Study on Preparation of Sputtered WSi_x/Si Multilayer Films

作　　者：王晓平[1] 赵特秀[1] 施一生[1] 季航[1] 梁齐[1] 

机构地区：[1]中国科学技术大学,江苏盐城师专

出　　处：《中国科学技术大学学报》1994年第3期345-350,共6页JUSTC

摘　　要：采用多层溅射技术制备了不同成分的ＷＳｉｘ／Ｓｉ薄膜，然后利用真空退火形成硅化钨．对用此技术制备的难熔金属硅化物的结构特性、电学特性和氧化特性进行了系统的研究．结果表明这种技术具有以下特点：可以通过控制成分得到不同晶格结构的硅化物薄膜，可在硅衬底上形成浅接触，还可以防止金属钨的氧化．Tungsten silicides with different compositions are prepared from multilayer sputtering on silicon substrate by annealing at temperatures ranging from 400 to 1000℃ in vacuum.The results of XRD indicate that this deposition technology have three advantages.It can obtain silicide films with different structures easily by controling the thicknesses of sublayers; and it can form shallow contact with substrates;it can also prevent the tungsten films from being oxidized in the film preparing process.

关 键 词：多层溅射 XRD 硅化钨 薄膜 硅 

分 类 号：O484.1[理学—固体物理]