MOSFET Carrier Surface Effective Mobility with Thin Gate-Oxide Thickness  

作　　者：ZHAOYang PARKEStephen CHUJiamei BURKEFranklyn 

机构地区：[1]StateKeyLaboratoryofMillimeterWaves,SoutheastUniversity,Nanjing210096,China [2]DepartmentofElectrical＆ComputerEngineering,BoiseStateUniversity,Boise,Idaho83725,USA [3]SchoolofElectrical＆ElectronicEngineering,NanjingNormalUniversity,Nanjing210032,China／／StateKeyLaboratoryofMillimeterWaves,SoutheastUniversity,Nanjing210096,China

出　　处：《Chinese Journal of Electronics》2005年第2期264-267,共4页电子学报（英文版）

摘　　要：Mobility is a key parameter in MOSFET (Metal-oxide-semiconduetor field effect transistor) modeling. However, due to the influence of transverse electric field as a result of thin gate-oxide thickness in modern MOSFET, conventional carriers mobility of bulk device is no longer appropriate. In this paper the measurement of carrier surface effective mobility with thin gate-oxide of 40A thickness device is completed, and the modeling and characterization of this mobility is presented by employing BSIM model. Results show that our approach is effective to model surface mobility of thin gate-oxide device.

关 键 词：设备模型化 BSIM MOSFET 载波有效移动性 

分 类 号：TN386.1[电子电信—物理电子学]