脉冲激光退火纳米碳化硅的光致发光  

Photoluminescence of Nano-SiC Annealed by Pulse Laser

作　　者：于威[1] 何杰[1] 孙运涛[1] 韩理[1] 傅广生[1] 

机构地区：[1]河北大学物理科学与技术学院,河北保定071002

出　　处：《光谱学与光谱分析》2005年第4期506-508,共3页Spectroscopy and Spectral Analysis

基　　金：河北省自然科学基金 (50 31 2 9)资助项目

摘　　要：采用XeCl准分子脉冲激光退火技术制备了纳米晶态碳化硅薄膜(nc -SiC) ,并对薄膜的光致发光(PL)特性进行了分析。结果表明,纳米SiC薄膜的光致发光表现为30 0～6 0 0nm范围内的较宽发光谱带,随退火激光能量密度的增加,nc- SiC薄膜398nm附近的发光峰相对强度增加,而4 70nm附近发光峰相对减小。根据nc SiC薄膜的结构特性变化,认为这两个发光峰分别来源于6H -SiC导带到价带间的复合发光和缺陷态发光,并且这两种发光过程存在竞争。Nanocrystalline silicon carbon (nc-SiC) from amorphous silicon carbon films was obtained through XeCl excimer laser annealing. The photoluminescence (PL) of the nc-SiC was analyzed at different annealing laser energy density. It was observed that PL presented a wide luminescence band from 300-600 nm in the nc-SiC films. The two main luminescence bands, situated at 398 and 470 nm respectively, are attributed to band to band and defect recombination in the 6H-SiC based on the structure changes of the nc-SiC films. The relative PL intensity of these two bands was determined by the surface state density in the nc-SiC films and their irradiative life time.

关 键 词：光致发光 纳米碳化硅 激光退火 SIC薄膜 准分子脉冲激光 激光能量密度 6H-SiC 碳化硅薄膜 发光峰 退火技术 XECL 相对强度 特性变化 复合发光 发光过程 光谱带 缺陷态 

分 类 号：TN304.12[电子电信—物理电子学] TQ174.758[化学工程—陶瓷工业]