半导体工业中临界尺寸线边缘粗糙度的测量  

Line-edge-roughness measurement of critical-dimensions in semiconductor fabrication industry

作　　者：李洪波[1] 赵学增[1] 褚巍[1] 肖增文[1] 

机构地区：[1]哈尔滨工业大学机电工程学院,黑龙江哈尔滨150001

出　　处：《哈尔滨工业大学学报》2005年第5期674-678,共5页Journal of Harbin Institute of Technology

摘　　要：详细论述了刻线边缘粗糙度问题的产生原因,线边缘粗糙度的定义以及目前采用的测量方法和分析方法,比较了线边缘粗糙度的测量工具,并讨论了测量线边缘粗糙度的技术障碍.The background (reason) why line edge roughness is raised up, as well as the definition of line edge roughness according to ITRS is discussed. The current measurement and analysis method on line edge roughness are introduced and the measurement tools are compared. The technical barrier on the line edge roughness measurement is discussed also.

关 键 词：纳米 侧墙粗糙度 线边缘粗糙度 原子力显微镜 

分 类 号：TG84[金属学及工艺—公差测量技术] TH161[机械工程—机械制造及自动化]