氨化硅基Ga_2O_3/Al_2O_3制备GaN薄膜性质研究  

Characteristics of GaN Film Prepared by Ammoniating Ga_2O_3/Al_2O_3 Deposited on Si(111) Substrate

作　　者：魏芹芹[1] 薛成山[1] 孙振翠[1] 庄惠照[1] 王书运[1] 

机构地区：[1]山东师范大学,山东济南250014

出　　处：《稀有金属材料与工程》2005年第5期746-749,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金重大研究计划(90201025);国家自然科学基金(60071006)资助项目

摘　　要：研究了Ga2O3/Al2O3膜反应自组装制备GaN薄膜。首先利用磁控溅射法在硅衬底上制备Ga2O3/Al2O3膜,再将Ga2O3/Al2O3膜在高纯氨气气氛中氨化反应得到GaN薄膜。用傅里叶红外谱仪(FTIR),X射线衍射(XRD)和扫描电镜(SEM)对试样进行结构、组分和形貌分析。通过分析薄膜各方面的性质,得出了用此方法制备氮化镓薄膜的Al2O3缓冲层最佳的厚度为15nm左右,最佳氨化条件是在900℃下氨化15min。Gallium nitride (GaN) films have been successfully fabricated on silicon (111) substrates through ammoniating Ga2O3/Al2O3 films deposited by rf magnetron sputtering. The formed films were characterized by Fourier transform infrared (FTIR) transmission spectroscopy, X-ray diffraction (XRD) and Scanning electron microscopy (SEM). The sample with the thickness of the Al2O3 of about 15 nm, being ammoniated at 900 degrees C for 15 minutes, has the best crystal quality and surface morphology.

关 键 词：GAN Ga2O3/Al2O3膜 氨化 磁控溅射 

分 类 号：TN304[电子电信—物理电子学]