碳化硅CMOS倒相器温度特性  

Study of temperature properties of the SiC CMOS inverter

作　　者：王平[1] 杨银堂[1] 王旭[1] 

机构地区：[1]西安电子科技大学宽禁带半导体材料和器件教育部重点实验室,陕西西安710071

出　　处：《西安电子科技大学学报》2005年第3期396-399,共4页Journal of Xidian University

基　　金：教育部重点资助项目(02074);国家部委科技预研基金资助项目

摘　　要：建立了6H SiC材料和器件模型,应用二维器件仿真软件MEDICI对所设计的亚微米6H SiC CMOS倒相器的温度特性进行了研究.研究结果表明,该倒相器在600K的高温下仍可以正常工作,且具有良好的电压转移特性和瞬态特性;在300～600K的温度范围内,倒相器阈值电压由1.218V变化到1.274V,变化幅度较小.Based on the relevant models of 6H-SiC material and devices, the temperature properties of the submicron 6H-SiC CMOS inverter proposed in this paper are investigated with the 2-Dimensional device simulator MEDICI. Simulation results show that the inverter can operate at 600 K and has better voltage transfer and transient characteristics. The calculated switching threshold voltage of the inverter varies from 1.218 V to 1.274 V in the temperature range of 300-600 K with a 5 V power supply and its change is not significant. All this provides a valuable reference for the design of and the research on more complicated high temperature 6H-SiC CMOS circuits.

关 键 词：6H-SIC CMOS倒相器 温度特性 电压转移 阈值电压 

分 类 号：TN47[电子电信—微电子学与固体电子学]