SnO_2:Sb薄膜的制备和光致发光性质  

Preparation and Photoluminescence Characteristic of SnO:Sb Thin Films

作　　者：王玉恒[1] 马瑾[1] 计峰[1] 余旭浒[1] 张锡健[1] 马洪磊[1] 

机构地区：[1]山东大学物理与微电子学院,济南250100

出　　处：《Journal of Semiconductors》2005年第5期922-926,共5页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:90401004);教育部科学技术研究(批准号:02165)资助项目~~

摘　　要：用射频磁控溅射法在玻璃衬底上制备出SnO2∶Sb薄膜.制备样品为多晶薄膜,具有纯氧化锡的四方金红石结构和(110)择优取向,Sb离子以替位式掺杂的形式存在于SnO2 晶格中.室温条件下对样品进行光致发光测量,在392nm附近观测到强的紫外紫光发射,发射强度随制备功率的增加而增强,且样品退火后发射强度也明显增强.紫外紫光发射的起源被归于由Sb形成的施主能级和受主能级之间的电子跃迁.The SnO 2∶Sb films have been prepared on glass substrates by RF magnetron sputtering method.The prepared samples are polycrystalline thin films with rutile structure of pure SnO 2 and have orientation of (110) direction.The Sb 2O 3 phase and Sb 2O 5 phase are not found by XRD measurement and Sb ions exist in the lattices of SnO 2 as a kind of substitution doping.The photoluminescence of the samples is measured at room temperature.An intensive UV-violet luminescence peak near 392nm is observed.The effects of different power and annealing to photoluminescence of the films are studied and the luminescence mechanism is tentatively investigated.

关 键 词：SnO2:Sb薄膜 射频磁控溅射 光致发光 

分 类 号：TN304.21[电子电信—物理电子学]