Si基氨化ZnO/Ga_2O_3薄膜制备GaN纳米线  

Synthesis of GaN Nanowires Through Ammoniating ZnO/Ga_2O_3 Films on Si Substrates

作　　者：高海永[1] 庄惠照[1] 薛成山[1] 王书运[1] 何建廷[1] 董志华[1] 吴玉新[1] 田德恒[1] 

机构地区：[1]山东师范大学半导体研究所,济南250014

出　　处：《Journal of Semiconductors》2005年第5期931-935,共5页半导体学报（英文版）

基　　金：国家自然科学基金资助项目(批准号:90301002;90201025)~~

摘　　要：利用射频磁控溅射法在Si(111)衬底上溅射ZnO中间层和Ga2O3 薄膜,然后在管式炉中常压下通氨气对ZnO/Ga2O3 薄膜进行氨化,高温下ZnO层在氨气气氛中挥发,而Ga2O3 薄膜和氨气反应合成出GaN纳米线.X射线衍射测量结果表明利用该方法制备的GaN纳米线具有沿c轴方向择优生长的六角纤锌矿结构.利用扫描电子显微镜、透射电子显微镜、傅里叶红外透射谱、能量弥散谱及选区电子衍射观测并分析了样品的形貌、成分和晶格结构.研究发现ZnO层的挥发有利于Ga2O3 和NH3 反应合成GaN纳米线.ZnO middle layers and Ga 2O 3 films were sputte red in turn on Si(111) substrates using radio frequency sputtering system.Then ZnO/Ga 2O 3 films were ammoniated in tube furnace in the flowing NH 3 ambience under normal pressure.ZnO volatilized in NH 3 ambience at high temperature,and at the same time Ga 2O 3 reactived to NH 3 to synthesize GaN nanowires.The measurement results of X-ray diffraction reveal that c axis orientation is preferential in the growth of GaN nanowires with hexagonal wurtzite structure.The morphology,component and structure of the GaN nanowires are studied by SEM,TEM,Fourier transform infrared spectrophotometer,energy dispersive spectroscopy,and the selected area electron diffraction.The volatilization of ZnO layer may be helpful to the reaction of Ga 2O 3 and NH 3 to synthesize GaN nanowires.

关 键 词：GAN纳米线 ZnO/Ga2O3薄膜 射频磁控溅射 氨化 

分 类 号：TN304[电子电信—物理电子学]